From owner-qrp-l@Lehigh.EDU Wed Feb 12 01:53:41 1997 Received: from fidoii.CC.Lehigh.EDU (fidoii.CC.Lehigh.EDU [128.180.1.4]) by oucsace.cs.ohiou.edu (8.7.6/8.7.1) with ESMTP id BAA07543 for ; Wed, 12 Feb 1997 01:53:40 -0500 (EST) X-Received-x: from fidoii.CC.Lehigh.EDU (fidoii.CC.Lehigh.EDU [128.180.1.4]) by oucsace.cs.ohiou.edu (8.7.6/8.7.1) with ESMTP id BAA07543 for ; Wed, 12 Feb 1997 01:53:40 -0500 (EST) Received: from Lehigh.EDU ([127.0.0.1]) by fidoii.cc.lehigh.edu with SMTP id <35664-38722>; Wed, 12 Feb 1997 01:52:26 -0500 Received: from nss2.CC.Lehigh.EDU ([128.180.1.26]) by fidoii.cc.lehigh.edu with ESMTP id <35405-38722>; Wed, 12 Feb 1997 01:42:32 -0500 Received: from zia.aoc.nrao.edu (zia.aoc.nrao.edu [146.88.1.4]) by nss2.CC.Lehigh.EDU (8.8.5/8.8.5) with SMTP id BAA86036 for ; Wed, 12 Feb 1997 01:42:13 -0500 Received: (from pharden@localhost) by zia.aoc.nrao.edu (8.6.12/8.6.10) id XAA15441 for qrp-l@lehigh.edu; Tue, 11 Feb 1997 23:42:08 -0700 Message-Id: <199702120642.XAA15441@zia.aoc.nrao.edu> Date: Tue, 11 Feb 1997 23:42:08 -0700 Reply-To: pharden@aoc.nrao.edu Sender: owner-qrp-l@Lehigh.EDU Precedence: bulk From: Paul Harden To: "Low Power Amateur Radio Discussion" Subject: DATA SHEET: IRF-510 X-Listprocessor-Version: 8.0 -- ListProcessor(tm) by CREN Status: O DATA SHEET: IRF510 POWER MOSFET TRANSISTOR Manufactured by Harris Semiconductors Available at most Radio Shacks (although incorrectly labeled "IFR510") Cost: $1.99 at Radio Shack (Cat. No. 276-2072) DESCRIPTION. The IRF510, IRF511, IRF512 and IRF513 are n-channel enhancement-mode silicon-gate power field-effect transistors. These power MOSFET's are designed for applications such as switching regulators, motor drivers, relay drivers, and drivers for high-power bipolar switching transistors requiring high speed and low gate-drive power. These types can be driven directly from integrated circuits. MAXIMUM RATINGS IRF510 IRF511 IRF512 -------------------------------------------------------------------- Vds Drain-source voltage 100v 80v 100v Vdgr Drain-gate voltage 100v 80v 100v Rgs=20K Vgs Gate-source voltage +/-20v +/-20v +/-20v Id Continuous drain current 5.6A 5.6A 4.9A ELECTRICAL CHARACTERISTICS (All types unless otherwise stated) -------------------------------------------------------------------- Igss Gate-source leakage 500nA (forward) -500nA (reverse) Idss Drain current, Vg=0v 250uA Id-on On state drain current 5.6A IFR510, IFR511 4.9A IFR512, IFR513 Rds-on Drain-source "on" Res. 0.4-0.54 ohms (device ON resistance) Cis Input capacitance 135pF (at Vds=12v, Cis=180pF) Cos Output capacitance 80pF (at Vds=12v, Cos=130pF) Td-on Turn-on delay time 8-11nS ) These parameters define Tr Rise time 25-36nS ) how fast the MOSFET turns Td-off Turn-off delay time 15-21nS ) on and off when gate is Tf Fall time 12-21nS ) driven with a square wave Vsd Diode forward voltage 2.5v (dropped across the source-drain due to the internal diode) SOME DATA FROM THE PERFORMANCE CURVES Output drain current (Id) vs. gate-source voltage (Vgs) at Vd=+12v Vgs=4v Id= 0A Vgs=5v Id= 1A Vgs=6v Id= 2.8A Vgs=7v Id= 4.8A Vgs=8v Id= 6.8A NOTE: Therefore, for a 5W QRP power amplifier, the gate-source voltage should not exceed 5-6v; otherwise excessive current will attempt to flow. A continuous applied Vgs >7.5v will cause Id to exceed the maximum drain current rating of 5.6A (IRF510). This will cause "catastrophic substrate failure" (commonly known as smoke!). What is the maximum frequency? Max. frequency is not specified, but since Tr= 36nS (rise time) and Tf = 21nS (fall time), a total device delay of 57nS occurs, worse case. f=1/t = 1/57nS = 17.5 MHz. Total "typical" device delay is 25+12ns= 37nS for f= 27 MHz. This does not take into account L/C loading of the output filter, etc., which will lower the maximum frequency which the MOSFET will toggle on and off. PIN-OUT _______ | O | | | <--- Metal Flange (Drain) ISOLATE FROM GROUND!!! ------- | IRF | | 510 | <--- Plastic TO-220 case | | |_____| I I I I I I <--- Leads (Max. temp = 300C for 10 seconds, max) I I I G D S ----------------------------------------------------------------- GL de Paul NA5N (1-97) NA5N@Rt66.com